? semiconductor components industries, llc, 2008 september, 2008 ? rev. 4 1 publication order number: 2n6284/d 2n6284 (npn); 2n6286, 2n6287 (pnp) preferred device darlington complementary silicon power transistors these packages are designed for general ? purpose amplifier and low ? frequency switching applications. features ? high dc current gain @ i c = 10 adc ? h fe = 2400 (typ) ? 2n6284 = 4000 (typ) ? 2n6287 ? collector ? emitter sustaining voltage ? v ceo(sus) = 100 vdc (min) ? monolithic construction with built ? in base ? emitter shunt resistors ? pb ? free packages are available* maximum ratings (note 1) rating symbol value unit collector ? emitter voltage 2n6286 2n6284/87 v ceo 80 100 vdc collector ? base voltage 2n6286 2n6284/87 v cb 80 100 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous peak i c 20 40 adc base current i b 0.5 adc total power dissipation @ t c = 25 c derate above 25 c p d 160 0.915 w w/ c operating and storage temperature range t j , t stg ? 65 to + 200 c thermal characteristics (note 1) characteristic symbol max unit thermal resistance, junction ? to ? case r jc 1.09 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. indicates jedec registered data. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com 20 ampere complementary silicon power transistors 100 volts, 160 watts to ? 204aa (to ? 3) case 1 ? 07 style 1 marking diagram 2n628x = device code x = 4, 6 or 7 g= pb ? free package a = location code yy = year ww = work week mex = country of orgin 2n628xg ayyww mex device package shipping ordering information 2n6284 to ? 3 100 units/tray 2N6284G to ? 3 (pb ? free) 100 units/tray 2n6286 to ? 3 100 units/tray 2n6286g to ? 3 (pb ? free) 100 units/tray 2n6287 to ? 3 100 units/tray 2n6287g to ? 3 (pb ? free) 100 units/tray collector case base 1 emitter 2 2 1
2n6284 (npn); 2n6286, 2n6287 (pnp) http://onsemi.com 2 25 50 100 125 200 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts) 160 60 40 140 0 75 150 0 20 80 100 120 175 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) (note 2) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter sustaining voltage (i c = 0.1 adc, i b = 0) 2n6286 2n6284, 2n6287 ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ? ??? ??? ??? vdc ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ? ? ???? ???? ???? 1.0 1.0 ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? c) ????? ????? ????? ????? ??? ??? ??? ??? ? ? ???? ???? ???? ???? 0.5 5.0 ??? ??? ??? ??? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 2.0 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (i c = 10 adc, i b = 40 madc) (i c = 20 adc, i b = 200 madc) ????? ????? ????? ????? ??? ??? ??? ??? ? ? ???? ???? ???? ???? 2.0 3.0 ??? ??? ??? ??? ?????????????????????? ?????????????????????? ? emitter on voltage (i c = 10 adc, v ce = 3.0 vdc) ????? ????? ??? ??? ? ???? ???? 2.8 ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter saturation voltage (i c = 20 adc, i b = 200 madc) ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 4.0 ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? ?????????????????????? magnitude of common emitter small ? signal short ? circuit forward current transfer ratio (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 mhz) ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ??? ??? ??? mhz ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ? ? ???? ???? ???? 400 600 ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ? signal current gain (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 khz) ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ??? ??? ??? 2. indicates jedec registered data. 3. pulse test: pulse width = 300 s, duty cycle = 2%
2n6284 (npn); 2n6286, 2n6287 (pnp) http://onsemi.com 3 figure 2. switching times test circuit 10 0.2 figure 3. switching times i c , collector current (amp) t, time (s) 7.0 2.0 1.0 0.7 0.5 0.1 0.3 0.7 3.0 20 0.2 1.0 5.0 0.3 3.0 5.0 0.5 2.0 7.0 0 v cc - 30 v scope tut + 4.0 v t r , t f 10 ns duty cycle = 1.0% r c d 1 must be fast recovery type e.g., 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 25 s d 1 51 r b & r c varied to obtain desired current levels v 2 approx + 8.0 v v 1 approx - 12 v 8.0 k 50 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities r b 10 t d @ v be(off) = 0 v t f t s t r 2n6284 (npn) 2n6287 (pnp) v cc = 30 vdc i c /i b = 250 i b1 = i b2 t j = 25 c figure 4. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), effective transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 r jc (t) = r(t) r jc r jc = 1.09 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 0.3 3.0 30 300
2n6284 (npn); 2n6286, 2n6287 (pnp) http://onsemi.com 4 active ? region safe operating area 50 figure 5. 2n6284, 2n6287 20 2.0 0.05 50 100 0.2 5.0 0.5 i c , collector current (amp) v ce , collector-emitter voltage (volts) 10 1.0 0.1 2.0 5.0 20 10 0.1 ms second breakdown limited bonding wire limited thermal limitation @ t c = 25 c single pulse t j = 200 c dc 5.0 ms 1.0 ms 0.5 ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 200 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 200 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10,000 1.0 figure 6. small ? signal current gain f, frequency (khz) 10 2.0 5.0 10 20 50 100 200 1000 500 100 5000 h fe , small-signal current gain 20 200 500 2000 1000 50 t j = 25 c v ce = 3.0 vdc i c = 10 a 1000 0.1 figure 7. capacitance v r , reverse voltage (volts) 100 1.0 2.0 5.0 20 100 10 c, capacitance (pf) 500 300 200 c ib c ob 50 0.2 0.5 2n6284 (npn) 2n6287 (pnp) t j = 25 c 700 2n6284 (npn) 2n6287 (pnp)
2n6284 (npn); 2n6286, 2n6287 (pnp) http://onsemi.com 5 figure 8. dc current gain i c , collector current (amp) 0.2 0.3 0.5 0.7 1.0 2.0 20 500 300 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 3.0 v 200 7.0 npn 2n6284 pnp 2n6287 20,000 5000 10,000 3000 2000 1000 3.0 5.0 i c , collector current (amp) 700 500 h fe , dc current gain t j = 150 c 25 c -55 c 300 30,000 10,000 20,000 5000 3000 1000 7000 700 10 v ce = 3.0 v 0.2 0.3 0.5 0.7 1.0 2.0 20 7.0 3.0 5.0 10 7000 2000 figure 9. collector saturation region v ce , collector\emitter voltage (volts) 3.0 i b , base current (ma) 2.6 2.2 1.8 1.4 1.0 v ce , collector\emitter voltage (volts) 3.0 i b , base current (ma) 0.5 1.0 2.0 3.0 5.0 7.0 50 2.6 2.2 1.8 1.4 i c = 5.0 a 10 a 15 a 1.0 0.7 30 20 0.5 1.0 2.0 3.0 5.0 7.0 50 0.7 30 20 i c = 5.0 a 10 a 15 a 10 10 t j = 25 c t j = 25 c i c , collector current (amp) v be(sat) @ i c /i b = 250 v, voltage (volts) figure 10. ?on? voltages i c , collector current (amp) v, voltage (volts) v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 t j = 25 c v be @ v ce = 3.0 v v ce(sat) @ i c /i b = 250 t j = 25 c 0.2 0.3 0.5 0.7 1.0 2.0 20 7.0 3.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 3.0 2.5 2.0 1.5 1.0 0.5 10 0.2 0.3 0.5 0.7 1.0 2.0 20 7.0 3.0 5.0 10 v be @ v ce = 3.0 v
2n6284 (npn); 2n6286, 2n6287 (pnp) http://onsemi.com 6 +5.0 figure 11. temperature coefficients i c , collector current (amp) 0.2 0.3 1.0 2.0 3.0 5.0 7.0 20 v , temperature coefficients (mv/ c) +4.0 +3.0 +1.0 0 -4.0 -1.0 -2.0 -3.0 -5.0 v b for v be * v c for v ce(sat) -55 c to + 25 c 25 c to 150 c 25 c to + 150 c 0.5 0.7 +5.0 i c , collector current (amp) v , temperature coefficients (mv/ c) +4.0 +3.0 +1.0 0 -4.0 -1.0 -2.0 -3.0 -5.0 v b for v be * v c for v ce(sat) npn 2n6284 pnp 2n6287 *applies for i c /i b h fe @v ce 3.0v 250 -55 c to + 25 c *applies for i c /i b h fe @v ce 3.0v 250 -55 c to + 25 c 25 c to 150 c 25 c to + 150 c -55 c to + 25 c 10 0.2 0.3 1.0 2.0 3.0 5.0 7.0 20 0.5 0.7 10 +2.0 +2.0 reverse forward 10 5 figure 12. collector cut ? off region v be , base-emitter voltage (volts) 10 2 10 1 10 0 , collector current (a) i c 10 -1 -0.2 -0.4 0 +0.2 +0.4 +0.6 v ce = 30 v t j = 150 c 100 c 25 c reverse forward 10 3 10 4 -0.6 -0.8 -1.0 -1.2 -1.4 10 3 v be , base-emitter voltage (volts) 10 0 10 -1 10 -2 , collector current (a) i c 10 -3 10 1 10 2 +0.2 +0.4 0 -0.2 -0.4 -0.6 +0.6 +0.8 +1.0 +1.2 + 1.4 v ce = 30 v t j = 150 c 100 c 25 c figure 13. darlington schematic npn 2n6284 pnp 2n6287 base collector emitter 8.0 k 60 base collector emitter 8.0 k 60
2n6284 (npn); 2n6286, 2n6287 (pnp) http://onsemi.com 7 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ? t ? seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t ? q ? ? y ? 2 1 u l g b v h to ? 204 (to ? 3) case 1 ? 07 issue z style 1: pin 1. base 2. emitter case: collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 2n6284/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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